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报道了用氦离子注入智能剥离形成SOI结构硅片的新技术，介绍了这种技术的工艺和用剖面透射电镜研究的结果。氦离子用等离子体浸没离子注入技术注入硅片中。
This paper reports the new technology of helium ion implanted into SOI wafer by intelligent peel-off, introduces the technology of the technology and the result of TEM. The helium ions are implanted into the silicon wafer by plasma immersion ion implantation.