论文部分内容阅读
,Parameter analysis for gate metal-oxide-semiconductor structures of ion-implanted 4H silicon carbid
【机 构】
：
School of Information Science and Technology,Northwest University,Xi’an 710127,China“,”School of Mic
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2010年9期
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