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In this report,the effect of temperature on the InAs/AlSb heterojunction and high-electron-mobility transistors(HEMTs)with a gate length of 2 μm are discussed comprehensively.The results indicate that device performance is greatly improved at cryogenic temperatures.It is also observed that the device performance at 90 K is significantly improved with 27％lower gate leakage current,12％higher maximum drain current,and 22.5％higher peak transconductance compared to 300 K.The temperature dependence of mobility and the two-dimensional electron gas concentration in the InAs/AlSb heterojunction for the temperature range 90 K-300 K is also investigated.The electron mobility at 90 K(42560 cm2/V·s)is 2.5 times higher than its value at 300 K(16911 cm2/V·s)because of the weaker lattice vibration and the impurity ioniza-tion at cryogenic temperatures,which corresponds to a reduced scattering rate and higher mobility.We also noted that the two-dimensional electron gas concentration decreases slightly from 1.99 × 1012 cm-2 at 300 K to 1.7 × 1012 cm-2 at 90 K with a decrease in temperature due to the lower ionization at cryogenic temperature and the nearly constant Δec.