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在Si(111)衬底上采用金属有机化合物化学气相沉积(MOCVD)技术外延生长GaN薄膜,对外延生长所得GaN薄膜的晶体结构和表面形貌进行表征,并研究SiNx插入层对GaN薄膜的晶体质量和表面形貌的影响。结果表明,在Si衬底上生长GaN薄膜过程中引入SiNx插入层可使GaN薄膜的(10-12)面的X-射线回摆曲线的半峰宽(FWHM)值从974.01减小到602.01arcsec;表面凹坑等缺陷减少、表面平整度提高。可见,SiNx插入层对在Si衬底上外延生长GaN薄膜的晶体质量和表面形貌有着重要的影响。
GaN films were epitaxially grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD) technique. The crystal structure and surface morphology of GaN films were characterized by epitaxial growth. The effects of SiNx insertion layer on the growth of GaN thin films Effect of quality and surface topography. The results show that the introduction of the SiNx insertion layer during growth of the GaN film on the Si substrate can reduce the FWHM of the X-ray backbones of the (10-12) plane of the GaN thin film from 974.01 to 602.01 arcsec Defects such as surface pits decrease and surface flatness improves. It can be seen that the SiNx insertion layer has an important influence on the crystal quality and the surface topography of the epitaxial growth of the GaN film on the Si substrate.