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实验采用射频磁控溅射法在玻璃衬底上沉积了ZnS多晶薄膜,研究了沉积气压、退火温度和衬底温度对ZnS薄膜质量的影响.利用X射线衍射(XRD)分析了薄膜的微结构,并计算了内应力值.通过紫外-可见光分光光度计测量了薄膜的透过谱,计算了Urbach能量和禁带宽度.利用扫描电子显微镜(SEM)观察了薄膜的表面形貌.结果表明:衬底温度为室温时沉积的ZnS薄膜具有较大的压应力,并且内应力值随着工作气压增大而增大,在300℃下进行退火处理后内应力松弛,衬底温度为350℃时制备的ZnS薄膜内应力小,透过率高,经300℃退火处理后结晶质量有所提高.
The effect of deposition pressure, annealing temperature and substrate temperature on the quality of ZnS thin films was studied by using RF magnetron sputtering method to deposit ZnS polycrystalline thin films on glass substrates.The microstructures of thin films were analyzed by X-ray diffraction (XRD) Structure, and calculated the internal stress value.The transmission spectra of the films were measured by UV-Vis spectrophotometer and the Urbach energy and the forbidden band width were calculated.The surface morphology of the films was observed by scanning electron microscopy (SEM) : The ZnS thin film deposited at room temperature has larger compressive stress, and the internal stress increases with the increase of working pressure. After annealing at 300 ℃, the internal stress relaxes and the substrate temperature is 350 ℃ ZnS thin films prepared when the stress is small, high transmittance, after annealing at 300 ℃ crystallization quality has improved.