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利用对离子注入的电离辐射敏感的CMOS剂量测定器的响应特性证实,在典型的~(60)Co辐射装置中,剂量增强达55％。这些IC分成对作试验,其中一类在硅芯片上方盖上氧化铝盖板,另一类在上方盖上金/柯伐盖板,以评价剂量增强效应。另外还用1.3mm厚的铅过滤层作了试验,结果证明,剂量增强效应主要是由辐射场中的低能量成分引起的。
The response characteristics of a CMOS dosimeter that is sensitive to ionizing ionizing radiation confirm that the dose enhancement is 55% in a typical ~ (60) Co radiation device. The ICs were divided into pairs, one of which was covered with an alumina cover over a silicon chip and the other with a gold / Kovar cover over to evaluate the dose enhancement effect. In addition, a 1.3mm-thick lead filter was also used to test the results. The results show that the dose-enhancing effect is mainly caused by the low-energy components in the radiation field.