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采用TCP(Transverse coupled plasma)等离子体辅助电子枪蒸镀技术,在玻璃衬底上制备了TiN薄膜。用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和原子力显微镜(AFM)研究了不同工艺条件对薄膜晶体结构和表面形貌的影响;用四探针法测量薄膜的电阻率变化。结果表明,所制备的TiN薄膜在(111)晶面有择优取向。与金属薄膜类似,TiN薄膜的平均表面粗糙度与电阻率之间存在近似线性关系,并且电阻率随残余应力增大而增大。
TiN thin films were prepared on glass substrates by TCP (Transverse coupled plasma) plasma assisted electron gun evaporation technology. The effects of different process conditions on the crystal structure and surface morphology of the films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The resistivity of the films was measured by four-probe method. The results show that the prepared TiN film has a preferred orientation on the (111) crystal plane. Similar to the metal film, there is an approximately linear relationship between the average surface roughness of the TiN film and the resistivity, and the resistivity increases as the residual stress increases.