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由我校低能所李国辉副研究员主持,刘伊犁教授、姬成周副研究员和GaAs新器件课题组参加完成的国家自然科学基金项目“GaAsIC中的离子注入和白光快速退火技术”,近日通过了国家科委主持的鉴定.学部委员黄祖洽教授以及北京市技术研究院的有关同志参加了鉴定会.该成果研究了GaAs集成电路中离子注入的关健技术,提出了形成高质量离子注入层的技术条件,在材料与离子注入层特殊关系的研究中提出了新见解;应用形成的技术成果探讨了新型器件研制中的物理、器件、材料与工艺问题,并研究了有关的检测技术,对提高材
Lecture by Prof. Li Guohui, associate professor of Low Energy Institute of our university, Prof. Liu Yili, Associate Professor Ji Chengzhou and GaAs New Devices Project participated in the National Natural Science Foundation of China project “ion implantation and white light rapid annealing in GaAsIC” and recently passed the National Science and Technology Commission Presided over the identification of Professor Huang Zuqian Academic Committee and the Beijing Institute of Technology attended the appraisal of the relevant comrades.The results of research GaAs integrated circuit ion implantation of the key technologies and proposed the formation of high quality ion implantation layer of the technical conditions in Materials and ion-implanted layer of the special relationship proposed in the study of new insights; application of the results of the formation of new devices discussed in the development of physics, devices, materials and technology issues, and the relevant testing techniques, to improve the material