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对亚100 nm硅集成技术融合趋势进行了展望。各项新技术使MOSFET器件可以按比例缩小到10 nm以下节点,让摩尔定律在未来很长时间继续有效。另一方面,随着硅通孔等技术的日益成熟,器件、芯片、晶圆和介质层之间将以各种灵活的方式进行互连,实现各式各样的三维硅集成。在摩尔定律指引下的器件小型化技术、沿着后摩尔定律方向的三维硅集成技术,以及两者之间的相互融合,是亚100 nm硅集成技术的发展方向。
The prospect of sub-100 nm integration of silicon integrated technology is prospected. The new technology allows MOSFET devices can be scaled down to 10 nm node below, so that Moore’s Law in the future to continue for a long time effective. On the other hand, as technologies such as through-silicon vias become more sophisticated, devices, chips, wafers, and dielectric layers will be interconnected in a variety of flexible ways to enable a wide range of 3D silicon integration. The miniaturization of devices under the guidance of Moore’s Law, the integration of three-dimensional silicon along the direction of Post-Moore’s Law, and the mutual fusion between the two are the development directions of sub-100-nm silicon integration technology.