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众所周知,SiO_2-Si结构中界面态和固定界面电荷以及SiO_2中的陷阱电荷,强烈影响硅平面型器件的性能及其稳定性.因此用退火来降低这些电荷中心是非常重要的.我们用氧气氛低压辉光放电产生的射频等离子体对SiO_2-Si界面退火(简称RFP退火).实验
It is well known that the interface states and the interfacial charges in the SiO_2-Si structure as well as the trap charges in SiO_2 strongly influence the performance and the stability of the silicon planar devices. Therefore, it is very important to reduce these charge centers by annealing. RF plasma generated by low-voltage glow discharge annealed the SiO_2-Si interface (referred to as RFP annealing) .Experiment