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量子阱光电探测器可以用来制作对6μm-25μm红外辐射灵敏的量子阱红外光电探测器。量子阱是通过将第一种比较薄的半导体膜层(一般为GaAs)封装在两层邻近的第二种半导体膜层(一般为AlxGa1-xAs)之间构
Quantum well photodetectors can be used to make quantum well infrared photodetectors sensitive to 6μm-25μm infrared radiation. Quantum wells are formed by encapsulating a first, relatively thin semiconductor film (typically GaAs) between two adjacent second semiconductor film layers (typically AlxGa1-xAs)