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根据导线表面所产生的磁场来做电流测量,通常只能对大电流进行。用铟化砷制成的霍尔元件的灵敏度的温窿系数约为0.1%/℃,但是温度随着导线电流的变化而变化,所以霍尔电压的偏移相当大。由于霍尔元件的内阻与温度向同一方向增大,所以采用向霍尔元件加电阻做为负载的方法,不能补偿灵敏度的温度依赖关系。
According to the magnetic field generated by the wire surface to do current measurement, usually only for high current. Hall element made of indium arsenide has a sensitivity of about 0.1% / ° C. The temperature coefficient of hole changes, but the temperature changes with the change of the wire current, so the Hall voltage offset is quite large. Since the internal resistance of the Hall element and the temperature increase in the same direction, a method of applying a resistance to the Hall element as a load can not compensate the temperature dependency of the sensitivity.