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本文采用DLTS方法,研究LPE-GaAs层中深电子陷阱(Es-0.72eV)的成因.通过改变外延生长条件,发现该电子陷阱的浓度明显受生长温度、降温速率及掺杂情况的影响.该陷阱中心可能是一个点缺陷和氧、碳杂质形成的络合物.
In this paper, the DLTS method was used to study the genesis of the deep electron trap (Es-0.72eV) in the LPE-GaAs layer.The concentration of the electron trap was significantly affected by the growth temperature, the cooling rate and the doping by changing the epitaxial growth conditions. The trap center may be a point defect and a complex of oxygen and carbon impurities.