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用直流平面磁控溅射沉积薄膜的方法在Si和玻璃基片上制备了Ta2O5／TiO5混合薄膜。薄膜的透射光谱研究结果表明，在TiO2掺入浓度为0到17％，薄膜的折射率从2.08到2.23。薄膜折射率与掺入TiO2的浓度是近线性关系。薄膜的MOS电容器的I—V和C－V测量表明，经过退火处理能够提高Ta2O5／TiO2混合薄膜的介电常数。
Ta 2 O 5 / TiO 5 hybrid films were prepared on Si and glass substrates by DC plane magnetron sputtering deposition. The results of transmission spectroscopy of the films showed that the refractive index of the films was 2.08 to 2.23 at TiO2 concentration of 0 to 17%. The refractive index of the film is closely related to the concentration of TiO2 doped. The I-V and C-V measurements of the thin-film MOS capacitors show that the dielectric constant of Ta2O5 / TiO2 hybrid films can be increased by annealing.