【摘 要】
：
The carrier-density-dependent spin relaxation dynamics for modulation-doped GaAs/Al_(0.3)Ga_(0.7)As quantum weiis is studied using the time-resolved magneto-Ker
【机 构】
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State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academ
【出 处】
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Chinese Physics Letters
论文部分内容阅读
The carrier-density-dependent spin relaxation dynamics for modulation-doped GaAs/Al_(0.3)Ga_(0.7)As quantum weiis is studied using the time-resolved magneto-Kerr rotation measurements.The electron spin relaxation time and its in-plane anisotropy are studied as a function of the optically injected electron density.Moreover,the relative strength of the Rashba and the Dresselhaus spin-orbit coupling fields,and thus the observed spin relaxation time anisotropy,is further tuned by the additional excitation of a 532 nm continuous wave laser,demonstrating an effective spin relaxation manipulation via an optical gating method.
The carrier-density-dependent spin relaxation dynamics for modulation-doped GaAs / Al_ (0.3) Ga_ (0.7) As quantum weiis is studied using the time-resolved magneto-Kerr rotation measurements. Electron spin relaxation time and its in-plane anisotropy are studied as a function of the optically injected electron density. Moreover, the relative strength of the Rashba and the Dresselhaus spin-orbit coupling fields, and thus the observed spin relaxation time anisotropy, is further tuned by the additional excitation of a 532 nm continuous wave laser, demonstrating an effective spin relaxation manipulation via an optical gating method.
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