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本文用不同的发射极宽度和长度与集电极电流Ｉ＿ｃ和集电极－发射极问电压Ｖ＿ＣＥ的函数关系研究了集电区含ＩｎＧａＡｓＰ层、基区为Ｚｎ高掺杂的小尺寸ＩｎＰ／ＩｎＧａＡｓＤＨＢＴ的高性能。结果表明，减小发射极宽度比减其长度能更有效地提高，０．８μｍ发射极金属条宽的ＤＨＢＴ在Ｉ＿ｃ＝４ｍＡ的小电流时，具有超出超高的ｆ＿（ｍａｘ）和ｆ＿Ｔ，其数值分别为２６７ＧＨｚ和１４４ＧＨｚ，ｆ＿（ｍａｘ）的增加归结为基区电阻和降低了的Ｂｃ结电容乘积的降低。
In this paper, the relationship between collector current I_c and collector-emitter voltage V_CE is studied in terms of different emitter widths and lengths as a function of collector current-collector voltage V_CE. The high-doped InP / InGaAsDHBTs with InGaAsP layers in the collector region and Zn- performance. The results show that decreasing the emitter width more effectively than decreasing its length, the DHBT with a 0.8μm emitter metal width has f_max and f_T beyond ultrahigh at low current with I_c = 4mA The values are 267 GHz and 144 GHz, respectively. The increase in f max is attributed to the reduction of the product of the base resistance and the reduced Bc junction capacitance.