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实验研究表明热生长１３ｎｍ薄ＳｉＯ２的可靠性同氧化前硅表面清洗处理方法有很大关系．氧化前稀ＨＦ酸及ＨＦ／乙醇漂洗不会提高热氧化薄ＳｉＯ２的可靠性；氧化前用ＮＨ４ＯＨ／Ｈ２Ｏ２／Ｈ２Ｏ（０．０５∶２∶５）溶液清洗形成化学预氧化层对提高薄ＳｉＯ２可靠性很有效；用Ｈ２ＳＯ４／Ｈ２Ｏ２（３∶１）溶液清洗形成预氧化层的改善作用也较明显，在之前增加比例为０．０５∶２∶５或１∶２∶５的ＮＨ４ＯＨ／Ｈ２Ｏ２／Ｈ２Ｏ溶液清洗和稀ＨＦ酸漂洗效果更好．另外，薄栅介质抗电离辐射性能和抗热电子损伤能力同氧化前形成化学预氧化层的清洗液种类关系不大，电离辐射对薄栅介质击穿特性的影响不明显．
Experimental studies have shown that the thermal growth of 13nm thin SiO2 reliability with pre-oxidation of silicon surface cleaning treatment has a great relationship. Pre-oxidation HF acid and HF / ethanol rinsing will not improve the reliability of thermal oxidation of thin SiO2; Pre-oxidation with NH4OH / H2O2 / H2O (0.05: 2: 5) solution to form a chemical pre-oxidation layer to improve the reliability of thin SiO2 The effect of cleaning with H2SO4 / H2O2 (3: 1) to form a pre-oxidized layer is also more pronounced, with the addition of NH4OH / H2O2 / H2O in ratios of 0.05: 2: 5 or 1: Solution cleaning and dilute HF acid rinse better. In addition, the anti-ionizing radiation properties and thermal electron damage resistance of the thin gate dielectric have little to do with the type of cleaning liquid that forms the chemical pre-oxidation layer before oxidation, and the effect of ionizing radiation on the breakdown characteristics of the thin gate dielectric is not obvious.