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本报告报导的有关InP材料的研究工作是在1982年10月至1983年9月30日期间,在空军部资助下完成的。资助中的一部分是罗姆空军发展中心提供的。本计划的当前目标是改善用作晶体生长原材料的高纯多晶磷化锢的生长和建立最佳液封直拉法(LEC),以便生长出具有低缺陷密度,低剩余杂质浓度和均匀掺杂浓度的单晶。我们共合成了二十三个InP锭条。在77K下,迁移率有的高达8.6×10~4cm~2V~(-1)s~(-1)。从两个不同炉子合成的锭的头部切下的样品,测量得到的迁移率平均值分别为6.7×10~4和2.8×10~4cm~2V~(-1)s~(-1)。研究迁移率存在这一显著差别的更进一步的实验正在进行。由英国皇家信息雷达研究中心提供的在高磁场下的光荧光数据表明,在最高纯度的多晶锭中,S是主要施主。从富锢熔体中生长了几个标称为非掺杂LEC锭。从这些锭中的一个锭上切下的样品,77K下迁移率为7.0×10~4cm~2V~(-1)s~(-1),这是迄今报导过的LEC InP晶体的最高值。根据皇家信息雷达研究中心的光荧光数据,一类还未被确认的粒子(可能是本身固有的缺陷)在高纯InP锭中是主要施主,而不管这些锭是从富锢熔体还是从化学配比熔体中生长。还有S是重要的施主而Si则是次要的。在掺杂LEC晶体生长实验中,通过增加籽晶或者坩埚转速,可在小范围内把掺杂剂浓度的纵向和径向变化减少百分之几。
The research reported in this report on InP materials was completed from October 1982 until September 30, 1983 with funding from the Air Force. Part of the funding is provided by the Roma Air Force Development Center. The current goal of this program is to improve the growth of high-purity polycrystalline phosphors used as raw material for crystal growth and to establish the optimum liquid-sealed Czochralski method (LEC) in order to grow low density, low residual impurity concentration and uniform doping Mixed concentration of single crystal. We have combined a total of 23 InP ingots. At 77K, the mobility is as high as 8.6 × 10 ~ 4cm ~ 2V ~ (-1) s ~ (-1). The average mobility of the samples cut from the heads of the ingots synthesized from two different furnaces was 6.7 × 10 -4 and 2.8 × 10 -4 cm -2V -1 s -1, respectively. Further experiments to study this significant difference in mobility are underway. Photo-fluorescence data at high magnetic fields provided by the Royal Institute of Radiation Research of England showed that S is the dominant donor in polycrystalline ingots of the highest purity. Several nominal non-doped LEC ingots were grown from confined melt. The sample cut from one of these ingots showed a mobility of 7.0 × 10 ~ 4cm ~ 2V ~ (-1) s ~ 1 at 77K, which is the highest reported value of LEC InP crystal so far. According to the photofluorescence data from the Royal Institute for Radiological Information, a group of unidentified particles (which may be inherently defective) are the main donors in the high purity InP ingot, regardless of whether the ingot is from a confined melt or from a chemical Proportion of the growth in the melt. S is also an important donor and Si is secondary. In doped LEC crystal growth experiments, longitudinal and radial changes in dopant concentration can be reduced by a few percent in a small area by increasing the speed of the seed or crucible.