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ESD保护是集成电路设计中重要的考虑因素,SCR因电流泄放能力强、芯片面积小,成为ESD保护设计中主流的解决方案。基于0.35μm CMOS混合信号工艺,实现了一种用于ESD保护的MDDSCR器件,通过堆叠MDDSCR单元调整维持电压,结合TLP测试结果,说明了关键尺寸和不同的衬底连接方式对器件特性的影响。堆叠DDSCR正向触发电压(Vt1)和维持电压(VH)随着堆叠器件数量增加而线性增加,负向则因为额外寄生通路的存在保持单个双向SCR单元的特性,触发电压和维持电压分别维持在20V和6V左右,器件均可实现6 kV以上的HBM ESD保护能力,可广泛应用于汽车电子、无线基站、工业控制等电源或者信号引脚的双向ESD保护。
ESD protection is an important consideration in the design of integrated circuits. Due to its high current drain capacity and small chip area, SCR has become the mainstream solution in ESD protection design. Based on the 0.35μm CMOS mixed-signal process, an MDDSCR device for ESD protection is implemented. By adjusting the sustain voltage by stacking the MDDSCR cells, the effect of the critical dimensions and different substrate connections on the device characteristics is illustrated based on the TLP test results. Stacked DDSCR The forward trigger voltage (Vt1) and the sustain voltage (VH) increase linearly with the number of stacked devices, while the negative ones maintain the characteristics of a single bidirectional SCR cell due to the presence of additional parasitic paths, with the trigger voltage and the sustain voltage maintained at 20V and 6V, the device can achieve more than 6kV HBM ESD protection capability and can be widely used in bidirectional ESD protection of power supply or signal pins such as automotive electronics, wireless base stations, industrial control and the like.