论文部分内容阅读
一、引言大规模和超大规模集成电路的发展,对硅单晶质量提出了越来越高的要求。直拉硅单晶中的杂质氧,使晶体在生长或器件制造的热处理过程中,产生堆垛层错、位错环和硅氧沉淀等缺陷。另一方面,氧化物沉淀引入的位错对表面沾污有本征吸杂的作用。因此硅中氧浓度是单晶质量的重要标志。一般直拉硅单晶中的氧浓度都超过1×10~(18)原子/厘米~3,而且单晶头部含量高于尾部。纵向
I. INTRODUCTION The development of large-scale and very large-scale integrated circuits has raised higher and higher requirements for the quality of silicon single crystals. Czochralski silicon in the impurity oxygen, the crystal growth or device manufacturing in the heat treatment process, resulting in stacking faults, dislocation loops and silica deposition and other defects. On the other hand, dislocations introduced by oxide precipitation have the effect of intrinsic gettering on the surface contamination. Therefore, the oxygen concentration in silicon is an important indicator of single crystal quality. In general, the oxygen concentration in Czochralski silicon single crystals exceeds 1 × 10 18 atoms / cm 3, and the content of single crystal head is higher than the tail. Longitudinal