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Electrical and optical properties of InGaN/AlGaN double heterostructure blue light-emitting diodes were inves tigated. Measurement of the forward bias current-voltage behaviour of the device demonstrated a departure from the Shockley model of a p-n diode, and it was observed that the dominant mechanism of carrier transport across the junction is associated with carrier tunnelling. Electroluminescence experiments indicated that there was a main emission band around 2.80eV and a relatively weaker peak at 3.2eV. A significant blueshift of the optical emission band was observed, which was consistent with the tunnelling character of electrical characteris tics. Furthermore, the degradation in I － V characteristics and the low resistance ohmic short of the device were observed.