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本文报道了应用环境扫描电镜（ESEM）和同步辐射X射线白光形貌术对采用提拉法生长出的Nd:YVO4晶体进行的形貌及生长缺陷的分析,获得了该晶体的开裂表面的ESEM形貌像以及取自晶体肩部和中间部位的（001）面的同步辐射白光形貌像,观察到了位错、包裹物等缺陷,可为生长高质量的Nd:YVO4晶体提供重要的启示.
In this paper, the morphology and growth defects of Nd: YVO4 crystal grown by Czochralski method were analyzed by ESEM and synchrotron radiation X-ray topography. The ESEM The morphology and the synchrotron radiation white image of the (001) plane taken from the shoulder and middle part of the crystal show the defects such as dislocations and inclusions and provide important enlightenment for the growth of high quality Nd: YVO4 crystals.