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数值模拟了结构参数(超辐射区腔长和脊宽,光放大区腔长和张角)对双注入区量子点超辐射发光管器件性能(光谱和功率等)的影响。结果表明,当器件超辐射区注入电流和放大区注入电流均固定时,随着超辐射区腔长的增加,输出光谱中激发态强度减弱,基态强度先增强后减弱;随着放大区腔长的增加,输出光谱中基态强度增加,激发态强度先增加后减弱。超辐射区脊宽越大,逆向光波耦合到超辐射区的耦合系数越大,输出光强度越小。放大区张角越大,逆向光波耦合到超辐射区的耦合系数越小,输出光强度越小。为设计和优化该类型器件结构提供一定的依据。
The effects of structure parameters (cavity length and ridge width of the super-radiation zone, cavity length and aperture angle of the super-radiation zone) on the performance (spectral and power, etc.) of the quantum dot superluminescent tube in the double implanted region are numerically simulated. The results show that when the injection current of the device in the super-radiation zone and the injection current in the amplification zone are both fixed, the intensity of the excited state in the output spectrum decreases and the ground state intensity first increases and then decreases as the cavity length of the super-radiation zone increases. The intensity of the ground state increases in the output spectrum, and the intensity of the excited state first increases and then decreases. The larger the ridge width of the super-radiation zone, the larger the coupling coefficient of the coupling of the backward light wave to the super-radiation zone and the smaller the output light intensity. The larger the opening angle of the enlargement area, the smaller the coupling coefficient of coupling the reverse light wave to the super-radiation area, and the smaller the output light intensity. Provide some basis for designing and optimizing the structure of this type of device.