The Simulated Study on Si-Photoelectronic Negative Resistance Devices and Si-Ge Hetero-junction Hybr

• 出 处: 电子元件与材料
• 发表日期: 2001年04期
• 关键词: junction transistor bipolar photoelectric recombination fabrication depletion Ti

Abstract: “The study on the silicon photoelectronic negative resistance devices and the ones with high frequency and high speed are both scientific research projects which are supported by Nature Science Funds from the Nation and Tianjin city. The projec

Abstract: "The study on the silicon photoelectronic negative resistance devices and the ones with high frequency and high speed are both scientific research projects which are supported by Nature Science Funds from the Nation and Tianjin city. The projec