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本文首次使用分辨电子能量损失谱（ＨＲＥＥＬＳ）和紫外光电子能谱（ＵＰＳ）研究新腐蚀的多孔硅样品（ＰＳ）的电子结构．实验结果发现，从ＨＲＥＥＬＳ谱中能量损失阈值测得的多孔硅的能隙最可几值移到２．９ｅＶ左右，与文献报道的光激发谱（ＰＬＥ）的结果相近．ＵＰＳ结果发现多孔硅费米能级到价带顶的距离不同于单晶硅，结合ＨＲＥＥＬＳ和ＵＰＳ结果可以初步得出多孔硅与硅界面的能带排列．
For the first time, the electronic structures of newly eroded porous silicon samples (PS) were studied using resolved electron energy loss spectroscopy (HREELS) and ultraviolet photoelectron spectroscopy (UPS). The experimental results show that the energy gap of porous silicon measured from the energy loss threshold of HREELS spectrum can be shifted to about 2.9eV, which is similar to that reported in the literature of light excitation spectrum (PLE). UPS found that the distance from the porous silicon Fermi level to the top of the valence band is different from that of the monocrystalline silicon. Based on the HREELS and UPS results, the energy band arrangement of the interface between the porous silicon and the silicon can be initially obtained.