Influence of Al~(3+) doping on the energy levels and thermal property of the 3.5MgO·0.5MgF_2·GeO_2:M

• 作 者: 苑琳琳 张晓松 徐建萍 孙健 金含 刘晓娟 李霖霖 李岚
• 机 构: Institute of Material Physics, Key Laboratory for Optoelectronic Materials and Devices of Tianjin, K
• 出 处: Chinese Physics B
• 发表日期: 2015年08期
• 关键词: doping phonon phosphor explained excitation octahedral luminescence tetrahedral

A series of Al3+-doped 3.5MgO·0.5MgF2·GeO2:Mn4+red-emitting phosphors is synthesized by high temperature solid-state reaction. The broad excitation band at 300 nm–380 nm, resulting from the4A2→4T1transition of Mn4+,exhibits a blue shift with the increase of Al2O3 content. The observation of the decreased Mn4+–O2-distance is explained by the crystal field theory. The temperature-dependent photoluminescence spectra with various amounts of Al2O3 content are comparatively measured and the calculation shows that the activation energy increases up to 0.41 eV at the Al2O3 content of 0.1 mol. The maximum phonon densities of state for these samples are calculated from Raman spectra and they are correlated with the thermal properties.

A series of Al3 + -doped 3.5MgO · 0.5MgF2 · GeO2: Mn4 + red-emitting phosphors is synthesized by high temperature solid-state reaction. The broad excitation band at 300 nm-380 nm, resulting from the 4A2 → 4 T1 transfer of Mn4 + The observation of the decreased Mn4 + -O2-distance is explained by the crystal field theory. The temperature-dependent photoluminescence spectra with various amounts of Al2O3 content are comparatively measured and the calculation shows that the activation energy increases up to 0.41 eV at the Al2O3 content of 0.1 mol. The maximum phonon densities of the state for these samples were calculated from Raman spectra and they are correlated with the thermal properties.