Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method

• 作 者: 耿苗 李培咸 罗卫军 孙朋朋 张蓉 马晓华
• 机 构: School of Advanced Materials and Nanotechnology, Xidian University,Key Laboratory of Microelectronic
• 出 处: Chinese Physics B
• 发表日期: 2016年11期
• 关键词: switch intrinsic transistor verified drain embedding breakdown extrinsic modeled

A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor(HEMT) switch.The new extraction method is verified by comparing the simulated S-parameters with the measured data over the 5-40 GHz frequency range.The percentage errors E_(ij) within 3.83% show the great agreement between the simulated S-parameters and the measured data.

A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor (HEMT) switch. The new extraction method is verified by comparing the simulated S-parameters with the measured data over the 5-40 GHz frequency range. percentage errors E_ (ij) within 3.83% show the great agreement between the simulated S-parameters and the measured data.