16千兆赫40瓦的脉冲耿二极管振荡器

• 作 者: R.Stevens 张铁桥
• 出 处: 半导体情报
• 发表日期: 2004年期
• 关键词: 千兆赫 俘越二极管 限累二极管 器件 振荡器 半导体器件 微波频率 高峰值功率 峰值功率 上升时间

微波频率下的高峰值功率能从几种半导体器件(如耿二极管、限累二极管、俘越二极管等)中产生,但是,其中某些器件只有很少量能脱离实验室,而且还存在频率上的限制。耿器件是最实用和已被证实了的器件,但是在16千兆赫下,峰值功率容量仅在10瓦左右。本文叙述了一种简单的技术,它获得了功率的叠加,而无损别的参数,如射频上升时间。

High peak power at microwave frequencies can result from several semiconductor devices (such as GDN, DFD, captive diodes, etc.), however, some of these devices can be separated from the lab with only a small amount and exist in frequency limits. Geng device is the most practical and proven device, but at 16 GHz, the peak power capacity of only about 10 watts. This article describes a simple technique that achieves power superposition without loss of parameters such as RF rise time.