Self-organized GaN/AlN hexagonal quantum-dots:strain distribution and electronic structure

• 作 者: 刘玉敏 俞重远 任晓敏 徐子欢
• 机 构: School of Science,Beijing University of Posts and Telecommunications,Key Laboratory of Optical Commu
• 出 处: Chinese Physics B
• 发表日期: 2008年09期
• 关键词: hexagonal organized pyramid confinement piezoelectric calculating truncated capa

This paper presents a finite element method of calculating strain distributions in and around the self-organized GaN/AlN hexagonal quantum dots.The model is based on the continuum elastic theory,which is capable of treating a quantum dot with an arbitrary shape.A truncated hexagonal pyramid shaped quantum dot is adopted in this paper.The electronic energy levels of the GaN/AlN system are calculated by solving a three-dimension effective mass Shro¨dinger equation including a strain modified confinement potential and polarization effects.The calculations support the previous results published in the literature.

This paper presents a finite element method of calculating strain distributions in and around the self-organized GaN / AlN hexagonal quantum dots. The model is based on the continuum elastic theory, which is capable of treating a quantum dot with an arbitrary shape. A truncated hexagonal pyramid shaped quantum dot is adopted in this paper. electronic energy levels of the GaN / AlN system are calculated by solving a three-dimension effective mass Shro¨dinger equation including a strain modified confinement potential and polarization effects. results published in the literature.