【摘 要】
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Ti-Si-N thin films with different silicon contents are deposited by a cathodic arc technique in an Ar+N2+SiH4mixture atmosphere. With the increase of silane flo
【机 构】
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College of Science,Changchun University of Science and Technology,Changchun 130022“,”Institute of Ph
论文部分内容阅读
Ti-Si-N thin films with different silicon contents are deposited by a cathodic arc technique in an Ar+N2+SiH4mixture atmosphere. With the increase of silane flow rate, the content of silicon in the Ti-Si-N films varies from2.0 at. % to 12.2 at.%. Meanwhile, the cross-sectional morphology of these films changes from an apparent columnar microstructure to a dense fine-grained structure. The x-ray diffractometer (XRD) and x-ray photoelectron spectroscopy (XPS) results show that the Ti-Si-N film consists of TiN crystallites and SiNx amorphous phase.The corrosion resistance is improved with the increase of silane flow rate. Growth defects in the films produced play a key role in the corrosion process, especially for the local corrosion. The porosity of the films decreases from 0.13% to 0.00032% by introducing silane at the flow rate of 14 sccm.
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