【摘 要】
：
The various advantages of extended-source (ES),broken gate (BG),and hetero-gate-dielectric (HGD) technology are blended together for the proposed tunnel field-e
【机 构】
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Institute of Electrical and Electronic Engineering,Anhui Science and Technology University,Fengyang
论文部分内容阅读
The various advantages of extended-source (ES),broken gate (BG),and hetero-gate-dielectric (HGD) technology are blended together for the proposed tunnel field-effect transistor (ESBG TFET) in order to enhance the direct-current and analog/radio-frequency performance.The source of the ESBG TFET is extended into channel for the purpose of increasing the point and line tunneling in the device at the tunneling junction,and then,the on-state current for the ESBG TFET increases.The influence of the source region length on the direct-current and radio-frequency performance parameters of the ESBG TFET is analyzed in detail.The results show that the proposed TFET exhibits a high on-state current to off-state current ratio of 1013,large transconductance of 1200 μS/μm,high cut-off frequency of 72.8 GHz,and high gain bandwidth product of 14.3 GHz.Apart from these parameters,the ESBG TFET also demonstrates high linearity distortion parameters in terms of the second-and third-order voltage intercept points,the third-order input interception point,and the third-order intermodulation distortion.Therefore,the ESBG TFET greatly promotes the application potential of conventional TFETs.
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