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对平面型电力电子器件场环终端进行了优化设计与试验研究．提出了用混合因子Ｍｘ（载流子密度与固定电荷密度之比）作为判断理想耗尽区近似是否合理的指标．采用零场强边界判定法，开发出能在３８６型或４８６型微机上进行模拟器件反偏状况的优化设计程序．根据设计结果制作了几种不同结构的场环器件，以测量其实际耐压．单结在１ｋＶ左右，改进后的方案用于高压ＳＩＴＨ器件的研制，耐压在１．２ｋＶ左右，最高可达１．５ｋＶ．
The field ring terminal of planar power electronics has been optimized design and experimental research. Proposed the use of mixed factor Mx (carrier density and fixed charge density ratio) as an indicator of the ideal depletion region approximation is reasonable. Using zero-field boundary decision method, an optimized design program that can simulate the reverse bias conditions of analog devices on a 386 or 486 microcomputer is developed. According to the design results, several different structures of field ring devices were fabricated to measure their actual withstand voltage. Single junction at about 1kV, the improved program for the development of high voltage SITH devices, with a voltage of about 1.2kV, up to 1.5kV.