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采用动电位沉积法在P型单晶硅（P－Si）上制备了NiP薄膜，利用循环伏安法对沉积和阳极溶出行为进行了研究．结果表明NiP合金中存在富镍和富磷的两种组分，具有不同的电化学活性；所获NiP合金的含P量为16．28Wt％，具有非晶态结构;在富P合金表面上进一步沉积时需要较高的过电位，说明P的加入不利于晶粒的继续长大而有利于非晶的形成．
NiP thin films were deposited on P-type single crystal silicon (P-Si) by potentiodynamic deposition. The deposition and anodic dissolution behaviors were studied by cyclic voltammetry. The results show that there are Ni-rich and P-rich components in NiP alloy with different electrochemical activities. The content of P in NiP alloy is 16.28Wt% and has an amorphous structure. On the surface of P-rich alloy, Further deposition requires a higher overpotential, indicating that the addition of P is not conducive to the continued growth of the grain is conducive to the formation of amorphous.