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本文详细研究了In_xGa_(1-x)As/GaAs应变量子阱的光学性质.用一维方势阱模型和应变对能带结构的影响解释了荧光发射峰.观察到应变对热电子弛豫过程的影响,并发现用光荧光实验确定的临界厚度基本满足力学平衡模型.
In this paper, the optical properties of In_xGa_ (1-x) As / GaAs strained quantum wells are studied in detail.The fluorescence emission peak is explained by the one-dimensional square well model and the influence of strain on the band structure.The effect of strain on the thermal electron relaxation process The results show that the critical thickness determined by fluorescence experiment basically satisfies the mechanical equilibrium model.