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采用热壁外延的方法在CdTe体材料衬底上外延一层CdTe,获得质量优于衬底的外延膜。外延层用X射线衍射定向,方向与衬底同为(111)。比较外延层和体材料电反射谱,表明外延层的质量优于衬底。利用俄歇电子能谱分析了外延层表面到衬底的元素组份及杂质成分。
A method of hot wall epitaxy is used to epitaxy a layer of CdTe on a CdTe bulk material to obtain an epitaxial film of better quality than that of the substrate. The epitaxial layer is oriented by X-ray diffraction in the same direction as the substrate (111). Comparing the electrical reflection spectra of the epitaxial layer and the bulk material indicates that the quality of the epitaxial layer is superior to that of the substrate. The elemental composition and impurity composition of the surface of epitaxial layer to substrate were analyzed by Auger electron spectroscopy.