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本文简要地介绍了Si-SiO_2界面态的性质,较详细地讨论了准静态测量技术。在禁带中央,准静态技术的测量精度优于1×10~(10)ev~(-1)· cm~(-2)。用这种方法能测禁带中部大约0.6ev范围的界面态的能量分布。我们测量了不同氧化方法及退火处理的界面态分布。实验表明:高温H_2退火,磷处理及蒸发Al后在N_2中的合金均可降低界面态密度,增加反型时间。但H_2退火使界面净电荷密度增加。氧化后的界面态密度可作到低于5×10~(10)ev~(-1)·cm~(-2),而蒸Al合金后的界面态密度达到2×10~(10)ev~(-1)·cm~(-2)以下。
In this paper, the properties of Si-SiO 2 interface states are briefly introduced. Quasi-static measurement techniques are discussed in detail. In the middle of forbidden band, the quasi-static measurement accuracy is better than 1 × 10 ~ (10) ev ~ (-1) · cm ~ (-2). The energy distribution of the interface states in the range of about 0.6 eV in the middle of the forbidden band can be measured by this method. We measured the interfacial distribution of different oxidation methods and annealing processes. Experiments show that the high temperature H 2 annealing, phosphorus treatment and evaporation of Al in N 2 alloy can reduce the interface state density, increase the inversion time. However, the annealing of H 2 increases the net charge density of the interface. The state density after oxidation is less than 5 × 10 ~ (10) ev ~ (-1) · cm ~ (-2), while the interface state density after steamed Al alloy reaches 2 × 10 ~ (10) ev ~ (-1) · cm ~ (-2) or less.