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基于薄膜全耗尽SOICMOS工艺,进行了建模分析,在300～600K温度范围内,利用ISETCAD软件对SOICMOS器件单管高温特性进行了模拟分析,同时利用Verilog软件对激光测距电路进行了整体仿真.通过工艺流片,实现了一种电路级具有完整功能和参数要求的高温工作的激光测距SOICMOS集成电路.通过实际测试表明模拟结果与之相吻合,同时通过对整体电路结果功能和参数在常温和高温下的测试,表明该电路功耗低、速度快,可满足激光测距电路的要求.该电路的研制,对进一步开展高温短沟道SOICMOS集成电路的研究具有一定的指导意义.
Based on the fully depleted SOICMOS process, the modeling analysis was carried out. The single-tube SOICMOS device high temperature characteristics were simulated and analyzed by ISETCAD software in the temperature range of 300-600K. The whole simulation of the laser ranging circuit was carried out by Verilog software Through the process flow sheeting, a circuit SOICMOS integrated circuit with laser cutting and high temperature operation with complete functions and parameters is realized.According to the actual test results, the simulation results agree well with the results of the whole circuit function and parameters The test under normal temperature and high temperature shows that the circuit has the advantages of low power consumption and fast speed, which can meet the requirements of laser ranging circuit.The development of this circuit is of guiding significance for the further research on high temperature short channel SOICMOS integrated circuit.