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一、引言克里岑(Klitzing)最近报导了一种新的量子效应可用来测定 h/ie~2(i=1,2,…),其中 h 为普朗克常数;e 为单位电荷。产生这种效应的原理如图1所示:一个附加霍尔电极的金属氧化物半导体场效应晶体管(MOSF—ET)在低温下放在垂直于它表面的强磁场中,垂直于它表面的电场(栅极电场)对垂直于半导体氧化层界面的运动产生一系列次能
I. INTRODUCTION Klitzing recently reported that a new quantum effect can be used to determine h / ie ~ 2 (i = 1,2, ...) where h is the Planck’s constant and e is the unit charge. The principle of this effect is shown in Figure 1: An additional Hall-effect MOS transistor (MOSF-ET) is placed in a strong magnetic field perpendicular to its surface at a low temperature, perpendicular to the electric field at its surface Gate electric field) produces a series of secondary energies to the motion normal to the semiconductor oxide interface