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利用多层溅射技术制备了不同组分的MoSi_x薄膜,然后研究其平面电阻的退火行为,发现平面电阻随薄膜成分呈现不同的变化趋势;对典型的MoSi_2和MoSi(?)两种成分的薄膜进行了系统的电阻率温度特性研究,发现多层薄膜在晶化之前和处于小晶粒时电阻率温度系数(TCR)为负值,并认为它和无序体系中电子的弱局域性有关.
The multi-layer sputtering technology was used to fabricate MoSi_x thin films with different compositions. Then the plane resistance of the films was studied and the planar resistance was found to vary with the film composition. For the typical MoSi_2 and MoSi films, The resistivity and temperature characteristics of the system were investigated and it was found that the temperature coefficient of resistivity (TCR) of the multi-layered thin film before crystallization and in the small grains was negative and was considered to be related to the weak localization of electrons in the disordered system .