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Low pressure MOCVD has been used to investigate the properties of low temperature buffer layer deposition conditions and their influence on the properties of high temperature GaN epilayers grown subsequently. It is found that the surface morphology of the as grown buffer layer after thermal annealing at 1 030 ℃ and 1 050 ℃ depends strongly on the thickness of the buffer layer. In particular when a thick buffer layer is used, large trapezoidal nuclei are formed after annealing.
Low pressure MOCVD has been used to investigate the properties of low temperature buffer layer deposition conditions and their influence on the properties of high temperature GaN epilayers grown subsequently. It is found that the surface morphology of the as grown buffer layer after thermal annealing at 1 030 ℃ and 1 050 ℃ depends strongly on the thickness of the buffer layer. In particular when a thick buffer layer is used, large trapezoidal nuclei are formed after annealing.