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提出了矩阵寻址方式的场发射驱动电路。设计出16级灰度显示的阴极驱动电路以及栅极驱动电路,并对其进行了性能仿真,仿真结果显示驱动电路性能优越。开发出与0.8μm标准CMOS工艺兼容的高压CMOS工艺,有效提高了驱动电路的集成度,并降低了生产成本。成功研制出用于场发射驱动电路输出端的100 V高低压电平转换电路,实验测得空载情况下电路的上升时间和下降时间分别为35,60 ns,能够满足高压驱动电路的频率要求。
A field-addressed driving circuit based on matrix addressing is proposed. The cathode drive circuit and gate drive circuit of 16 gray scale display are designed, and the performance simulation is carried out. The simulation results show that the drive circuit has superior performance. Developed high-voltage CMOS technology compatible with 0.8μm standard CMOS process, which effectively improves the integration of the driver circuit and reduces the production cost. Successfully developed 100 V high and low voltage level shifter circuit for the output of the field emission driver circuit experimentally measured the rise and fall time of the circuit under no-load conditions were 35,60 ns, respectively, to meet the high voltage drive circuit frequency requirements.