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针对LED倒装芯片中p-GaN与Ni/Ag/Au金属反射层之间的接触进行了研究,找到最优工艺条件。以光学反射率(455 nm波长)、比接触电阻率(SCR)、样品表面均方根粗糙度(RMS)和倒装芯片电参数测试结果为依据,找出Ni/Ag/Au金属反射层在N2环境下的最优退火条件。在不同N2流速、退火时间、退火温度下退火的Ni/Ag/Au金属反射层应用于254μm×559μm的GaN基发光二极管,来减小Ni/Ag/Au金属反射层与p-GaN比接触电阻率,降低LED工作电压及提高光学反射率、增强LED的发光亮度。并分析其在60 mA工作电流下正向电压和光输出功率的变化,在最优条件下制得的LED在直流电流60 mA下的正向平均电压为3.27 V,平均光输出功率为88.9 mW。
The contact between p-GaN and Ni / Ag / Au metal reflective layer in LED flip chip was studied, and the optimal process conditions were found out. Based on the results of optical reflectance (455 nm), specific contact resistance (SCR), root mean square roughness (RMS) and flip chip electrical parameters, the Ni / Ag / Au metal reflector N2 optimal annealing conditions. The Ni / Ag / Au metal reflective layer annealed at different N2 flow rates, annealing time and annealing temperature was applied to a 254μm × 559μm GaN-based light emitting diode to reduce the specific resistance of the Ni / Ag / Au metal reflective layer to p-GaN Rate, reduce the working voltage of LED and improve the optical reflectivity, enhance the LED’s brightness. And the change of forward voltage and optical output power under 60 mA operating current was analyzed. Under the optimum conditions, the average forward voltage of LED with DC current of 60 mA was 3.27 V and the average optical output power was 88.9 mW.