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介绍了单量子阱 (SQW )分别限制异质结构 (SCH)的InGaAsP/GaAs半导体激光器所得到的最新成果。利用一种改进的液相外延 (LPE)技术 ,在( 1 0 0 )GaAs衬底上制成的InGaAsP/GaAsSQWSCH激光器。主要参数如下 :发射波长λ =80 8± 4nm ,阈值电流密度J =30 0A/cm2 ,对于条宽W =1 0 0 μm的激光器 ,连续输出功率最大达到 4W
The latest achievements of InGaAsP / GaAs semiconductor lasers with single quantum well (SQW) confinement heterostructure (SCH) respectively are presented. InGaAsP / GaAsSQWSCH lasers fabricated on (100) GaAs substrates using an improved liquid phase epitaxy (LPE) technique. The main parameters are as follows: the emission wavelength λ = 80 8 ± 4nm, the threshold current density J = 30 0A / cm2, for the laser width of W = 100μm, the continuous output power up to 4W