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对采用快速加热、超低压－化学汽相淀积（ＲＴＰ／ＶＬＰ－ＣＶＤ）技术生长的Ｓｉ０．８Ｇｅ０．２／Ｓｉ应变外延层进行硼注入，注入能量为４０ｋｅＶ，注入剂量为２．５×１０１４ｃｍ－２。然后，进行不同时间、不同温度的快热退火（ＲＴＡ）和稳态炉退火。结果表明，ＲＴＡ优于稳态炉退火，其最佳条件是：退火时间为１０ｓ，退火温度范围为７５０℃～８５０℃，或者退火温度为７００℃，时间为４０ｓ，基本可消除由注入引起的损伤，获得约３００ｃｍ２／Ｖ·ｓ的空穴迁移率以及近１００％的激活率。
Boron implantation was performed on the Si0.8 Ge0.2 / Si strained epitaxial layer grown by rapid heating and ultra-low pressure chemical vapor deposition (RTP / VLP-CVD) with an implantation energy of 40 keV and an implantation dose of 2.5 × 1014 cm -2. Then, rapid thermal annealing (RTA) and steady-state furnace annealing were performed at different times and at different temperatures. The results show that the RTA is better than the steady state furnace annealing, the optimum conditions are as follows: the annealing time is 10s, the annealing temperature is 750 ℃ ~ 850 ℃, or the annealing temperature is 700 ℃, the time is 40s, Damage, get about 300cm2 / V · s hole mobility and nearly 100% activation rate.