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叙述氮化硅薄膜的制备工艺、敏感机理;描述氮化硅/硅离子敏感半导体电极的结构布置、技术参数和试制过程,在氮化硅膜上增加了一层化学敏感及选择性较好的PVC(聚乙烯)薄膜;考察了电极对离子的选择性和灵敏度的影响,并通过对离子浓度的测试,对研发过程中的一些问题进行了分析探讨;结果表明该电极对钾和氨等其它离子的选择性有所提高,响应时间缩短,敏感特性的线性范围增大;为离子选择电极的选择和开发,提供了新的途径。
The preparation process and the sensitive mechanism of the silicon nitride film are described. The structural layout, the technical parameters and the trial production process of the silicon nitride / silicon ion sensitive semiconductor electrode are described. A layer of silicon nitride film with high chemical sensitivity and good selectivity PVC (polyethylene) film. The influence of the electrode on the selectivity and sensitivity of the ions was investigated. Some problems in the research and development process were analyzed through the test of the ion concentration. The results showed that the electrode was sensitive to potassium and ammonia, Ion selectivity has increased, the response time is shortened, the linear range of sensitive properties increases; the selection and development of ion selective electrode provides a new way.