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一、引言 众所周知砷化镓(GaAs)是一种重要的半导体材料,可用它制造太阳电池、光学滤波器、发光二极管、激光器和其它的光电器件。然而现有制备GaAs的工艺都是十分复杂、耗能大、生产周期长因而成本高,这样以来,就成为限制GaAs作为太阳电池等器件材料的主要因素。多年来,寻找低成本制备GaAs的工艺便成为半导体工作者的重要研究方向。这里介绍的称之为电共沉积工艺,就是一种低成本制备GaAs薄膜工艺。Chandra等人曾用此工艺成功地制备了CdSe、MoSe、WSe和CuIn-Se_2等薄膜,而对制备GaAs薄膜的研究报导却很少。
I. INTRODUCTION It is well known that GaAs is an important semiconductor material that can be used to make solar cells, optical filters, LEDs, lasers, and other optoelectronic devices. However, the existing processes for preparing GaAs are very complicated, consume a large amount of energy, and have a long production cycle and thus a high cost. As a result, GaAs has become a major factor limiting the device materials such as solar cells and the like. Over the years, looking for low-cost preparation of GaAs process has become an important research direction of semiconductor workers. Described here as the electric co-deposition process, is a low-cost preparation of GaAs thin film process. Chandra et al. Have successfully prepared thin films such as CdSe, MoSe, WSe and CuIn-Se 2 by this process, and few studies have reported the preparation of GaAs thin films.