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随着集成电路的高度集成化和大功率微波晶体管的发展,芯片图形越来越复杂,线条越来越细,传统的紫外曝光由于衍射效应的影响,已不能满足亚微米微细加工的需要,因此必须对原有的光刻法作重大的改革或采取新的技术。光学投影曝光已逐渐取代了过去的接触式紫外曝光;近年来远紫外线光刻又以其廉价和简便的特点迅速走向实用;从60年代至70年代,国外在电子束曝光和 X 射线复印方面的研究更为普遍。本文着重介绍国外电子束与 X 射线光刻的发展情况、目前水平和可能的发展趋势。二、电子束曝光
With the high integration of integrated circuits and the development of high-power microwave transistors, chip patterns become more and more complex and the lines become finer and thinner. Because of the diffractive effect of conventional UV exposure, the traditional micro-lithography process can no longer meet the needs of submicron micro-fabrication. The original photolithography must be a major reform or adopt new technologies. Optical projection exposure has been gradually replaced by the previous contact UV exposure; in recent years, far ultraviolet lithography with its cheap and easy features quickly become practical; from the 1960s to the 1970s, foreign electron beam exposure and X-ray photocopying Research is more common. This article focuses on the development of foreign electron beam and X-ray lithography, the current level and possible trends. Second, electron beam exposure