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DDR(双数据速率)DRAM应用于工作站和服务器的高速存储系统中。存储器IC采用1.8V或2.5V电源电压,并需要等于电源电压一半的基准电压(V_(REF)=V_(DD)/2)。此外,各逻辑输出端都接一只电阻器,等于并跟踪V_(REF)的终端电压V_(TT)。在保持V_(TT)=V_(REF)±O.04V的同时,必须提供源流或吸收电流。图1所示电路可为1.8V和2.5V两种存储器系统提供终端电压,并可输出高达6A的电流。
DDR (double data rate) DRAM is used in high-speed storage systems for workstations and servers. The memory IC uses a 1.8V or 2.5V supply voltage and requires a reference voltage (V_ (REF) = V_ (DD) / 2) equal to half the supply voltage. In addition, each logic output is connected to a resistor, equal to and tracking V_ (REF) terminal voltage V_ (TT). While maintaining V_ (TT) = V_ (REF) ± 0.04V, source or sink must be supplied. The circuit shown in Figure 1 provides termination voltages for both 1.8V and 2.5V memory systems and can deliver up to 6A of current.