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报道了第一支0.25μm栅长n型Si/SiGe调制掺杂场效应晶体管的制作和器件特性结果。器件用于超高真空/化学汽相淀积(UHV/CVD)制作的器件,在300K(77K)下,应变Si沟道的迁移率和电子薄层载流子的深度为1500(9500)cm~2/V·s和2.5×10~(12)(1.5×10~(10))cm~(-2)。器件电流和跨导分别为325mA/mm和600mS/mm。这些值远优于Si MESFET,它们可与所获得的GaAs/Al-GaAs调制掺杂晶体管的结果相媲美。
The fabrication and device characteristics of the first 0.25μm gate-length n-type Si / SiGe modulation doped field effect transistor are reported. Devices for ultrahigh vacuum / chemical vapor deposition (UHV / CVD) devices fabricated at 300K (77K), the strained Si channel mobility and the electron carrier depth of 1500 (9500) cm ~ 2 / V · s and 2.5 × 10 ~ (12) (1.5 × 10 ~ (10)) cm ~ (-2). Device current and transconductance were 325mA / mm and 600mS / mm respectively. These values far outperform the Si MESFETs, which are comparable to the results obtained for GaAs / Al-GaAs modulation doped transistors.