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俄罗斯科学院半导体物理研究所西伯利亚分所已利用分子束外延技术在32×32元读出集成电路上制备出一个HgCdTe单片红外探测器。该单片探测器基于一种HgCdTe/CdTe/ZnTe/Si光敏异质结构,它是通过该研究所开发
The Siberian branch of the Institute of Semiconductors Physics at the Russian Academy of Sciences has used molecular beam epitaxy to fabricate a HgCdTe monolithic infrared detector on a 32 × 32-element readout integrated circuit. The monolithic detector is based on a HgCdTe / CdTe / ZnTe / Si photoactive heterostructure developed by the institute